| سال | هفته | ID | Title | ApplNo | IPC | Applicant | Subgroup | زیر گروه | رشته | شرح | Description |
|---|
2025 | 47 | WO/2025/129771 | WIRING SUBSTRATE AND PREPARATION METHOD THEREFOR, LIGHT-EMITTING SUBSTRATE, AND DISPLAY APPARATUS | CN2024/071693 | H01L 23/498 | BOE TECHNOLOGY GROUP CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/188364 | OPTICALLY-INDUCED COOLING | US2024/047985 | H01L 23/34 | THE REGENTS OF THE UNIVERSITY OF MICHIGAN | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/236124 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY PANEL | CN2024/092711 | H01L 27/12 | BOE TECHNOLOGY GROUP CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/236272 | POSITION LIMITING DEVICE FOR TRANSISTOR, POSITION LIMITING MODULE, AND ASSEMBLY METHOD THEREFOR | CN2024/093854 | H01L 23/40 | DELTA ELECTRONICS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/236422 | OPTICAL RECEIVER, OPTICAL RECEIVING MODULE, AND ELECTRONIC DEVICE | CN2024/109128 | H01L 25/16 | HARBIN HEG TECHNOLOGY DEVELOPMENT LTD., CO | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/236678 | CROSSTALK SHIELDING APPARATUS, CROSSTALK SHIELDING DEVICE AND INTELLIGENT TERMINAL DEVICE | CN2024/142374 | H01L 23/552 | GOERTEK MICROELECTRONICS INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/236793 | ELECTROCHEMICAL TREATMENT DEVICE FOR NITRIDE SEMICONDUCTOR AND WAFER DOPING TREATMENT PROCESS | CN2025/078527 | H01L 21/228 | SUZHOU LEKIN SEMICONDUCTOR CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/236841 | WET TREATMENT DEVICE | CN2025/082738 | H01L 21/67 | CHANGZHOU S.C EXACT EQUIPMENT CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/236943 | SEED LAYER PRETREATMENT DEVICE AND METHOD, AND SUBSTRATE TREATMENT APPARATUS | CN2025/088252 | H01L 21/67 | ACM RESEARCH (SHANGHAI) , INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/236968 | CHIP PACKAGING STRUCTURE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD FOR CHIP PACKAGING STRUCTURE | CN2025/089152 | H01L 23/528 | HUAWEI TECHNOLOGIES CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237101 | WAFER CASSETTE SWITCHING METHOD AND RELATED DEVICE | CN2025/092800 | H01L 21/677 | BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237105 | CLAMPING MECHANISM, BEARING ASSEMBLY AND WAFER CLEANING APPARATUS | CN2025/092851 | H01L 21/687 | BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237163 | HYBRID BONDING PACKAGING STRUCTURE AND MANUFACTURING METHOD THEREFOR | CN2025/093604 | H01L 21/56 | SJ SEMICONDUCTOR (JIANGYIN) CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237227 | DISPLAY PANEL AND DISPLAY DEVICE | CN2025/094213 | H01L 23/60 | BOE TECHNOLOGY GROUP CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237249 | XYθ POSITIONING DEVICE AND CONTROL METHOD THEREFOR | CN2025/094359 | H01L 21/68 | YINGUAN SEMICONDUCTOR TECHNOLOGY CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237508 | METHOD FOR MANUFACTURING AN AVALANCHE PHOTODETECTOR | EP2024/063140 | H01L 31/18 | HUAWEI TECHNOLOGIES CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237527 | POWER DEVICE WITH PASSIVATION INTERFACE | EP2024/063494 | H01L 29/06 | HUAWEI TECHNOLOGIES CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237528 | POWER SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE POWER SEMICONDUCTOR MODULE | EP2024/063542 | H01L 23/34 | HITACHI ENERGY LTD | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237587 | SILVER COATED COPPER RIBBON | EP2025/059405 | H01L 23/00 | HERAEUS ELECTRONICS GMBH & CO. KG | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237588 | SILVER COATED COPPER WIRE | EP2025/059406 | H01L 23/00 | HERAEUS ELECTRONICS GMBH & CO. KG | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237747 | SYSTEM CONSISTING OF A HEAT SINK ELEMENT AND DISTRIBUTION STRUCTURE, AND HEAT SINK ELEMENT AND DISTRIBUTION STRUCTURE FOR SUCH A SYSTEM | EP2025/062405 | H01L 23/473 | ROGERS GERMANY GMBH | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237866 | MANUFACTURING METHOD OF CURED FILM, CURED FILM, ELECTRONIC ELEMENT, AND MANUFACTURING METHOD OF ELECTRONIC ELEMENT | EP2025/062831 | H01L 21/02 | MERCK PATENT GMBH | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/237903 | CONNECTED ASSEMBLY AND METHOD FOR PRODUCING A CONNECTED ASSEMBLY | EP2025/062904 | H01L 21/50 | SCHOTT AG | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238402 | SUBSTRATE SUPPORT, PROCESSING APPARATUS, AND METHOD OF PROCESSING A SUBSTRATE IN A PROCESSING APPARATUS | IB2024/054768 | H01L 21/687 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238444 | METAL FOAM THERMAL INTERFACE MATERIALS | IB2025/053973 | H01L 21/48 | INTERNATIONAL BUSINESS MACHINES CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238469 | ZERO TRACK SKIP WITH IN-LINE VIA TO METAL LINE CONNECTION | IB2025/054659 | H01L 23/48 | INTERNATIONAL BUSINESS MACHINES CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238488 | METHOD FOR CONTROLLING A WET ETCHING PROCESS | IB2025/054822 | H01L 21/67 | NEXGEN WAFER SYSTEMS PTE. LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238712 | LIGHT-RECEIVING ELEMENT | JP2024/017815 | H01L 31/0232 | NTT, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238715 | LIGHT-RECEIVING ELEMENT | JP2024/017821 | H01L 31/0232 | NTT, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238716 | LIGHT-RECEIVING ELEMENT | JP2024/017822 | H01L 31/10 | NTT, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238721 | METHOD FOR PREDICTING OCCURRENCE RATE OF CRACKING, METHOD FOR SELECTING RESIN MATERIAL, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT | JP2024/017831 | H01L 23/12 | RESONAC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238786 | MAGNETIC DEVICE | JP2024/018134 | H01L 29/82 | SP-AITH LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238841 | SEMICONDUCTOR DEVICE | JP2024/018322 | H01L 21/768 | NTT, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238863 | LASER PROCESSING DEVICE | JP2024/018384 | H01L 21/301 | YAMAHA HATSUDOKI KABUSHIKI KAISHA | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238921 | HIGH-FREQUENCY MODULE | JP2025/000497 | H01L 25/00 | MURATA MANUFACTURING CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/238994 | PLASMA PROCESSING DEVICE AND SUBSTRATE SUPPORTER | JP2025/008770 | H01L 21/3065 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239031 | FILM FORMATION DEVICE, FILM FORMATION METHOD, AND ARTICLE MANUFACTURING METHOD | JP2025/011941 | H01L 21/027 | CANON KABUSHIKI KAISHA | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239042 | CLEANING WATER PRODUCTION DEVICE AND CLEANING WATER PRODUCTION METHOD | JP2025/013357 | H01L 21/304 | KURITA WATER INDUSTRIES LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239044 | BONDING STAGE | JP2025/013472 | H01L 21/52 | SHINKAWA LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239053 | SIC COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SAME | JP2025/013742 | H01L 21/02 | ROHM CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239101 | LAMINATED STRUCTURE, LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR DEVICE | JP2025/014866 | H01L 21/203 | JAPAN DISPLAY INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239105 | CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING CLEANED SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | JP2025/014904 | H01L 21/304 | FUJIFILM CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239202 | BONDING DEVICE AND BONDING METHOD | JP2025/016300 | H01L 21/60 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239203 | BONDING STATE INSPECTION DEVICE AND BONDING STATE INSPECTION METHOD | JP2025/016306 | H01L 21/02 | BONDTECH CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239204 | PLASMA PROCESSING DEVICE | JP2025/016312 | H01L 21/683 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239219 | MODULE | JP2025/016479 | H01L 23/12 | MURATA MANUFACTURING CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239220 | MODULE | JP2025/016480 | H01L 25/00 | MURATA MANUFACTURING CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239235 | METHOD FOR FORMING n-TYPE SILICON GERMANIUM LAYER | JP2025/016559 | H01L 21/208 | TOYO ALUMINIUM KABUSHIKI KAISHA | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239240 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD | JP2025/016587 | H01L 21/304 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239266 | SUBSTRATE CLEANING METHOD, AND METHOD FOR MANUFACTURING MASK BLANK | JP2025/016871 | H01L 21/304 | AGC INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239272 | SiC COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SAME | JP2025/016961 | H01L 21/02 | ROHM CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239357 | LASER MACHINING METHOD AND WAFER MANUFACTURING METHOD | JP2025/017400 | H01L 21/304 | DENSO CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239358 | METHOD FOR DIVIDING SUBSTRATE | JP2025/017401 | H01L 21/304 | DENSO CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239531 | BATH FOR CHEMICAL ETCHING | KR2025/004214 | H01L 21/67 | YCCHEM CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239751 | HEAT DISSIPATION PLATE STRUCTURE AND POWER SEMICONDUCTOR ASSEMBLY | KR2025/095309 | H01L 23/367 | LX SEMICON CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/239993 | DUAL INTERFACE SILICON STACK | US2025/019847 | H01L 23/532 | ADVANCED MICRO DEVICES, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240041 | PACKAGE INCLUDING SUBSTRATES, INTEGRATED DEVICES, AND HEAT SLUG | US2025/024209 | H01L 23/367 | QUALCOMM INCORPORATED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240054 | METHOD OF IN SITU LEAK MONITORING IN FLUID CIRCUITS | US2025/024871 | H01L 21/67 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240059 | MULTI-THICKNESS CHIP INTEGRATION INTO CAVITIES OF A HOST WAFER USING LATERAL DIELECTRIC MATERIAL | US2025/025039 | H01L 21/56 | PSEUDOLITHIC, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240089 | SELECTIVE PERIODIC EDGE DEPOSITION AND ETCH | US2025/025746 | H01L 21/67 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240098 | DEVICE PACKAGE HAVING A CAVITY WITH SLOPED SIDEWALLS | US2025/026266 | H01L 23/13 | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240113 | STRESS DISTRIBUTION FOR WAFER WARPAGE CONTROL | US2025/026814 | H01L 23/00 | PSEMI CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240115 | PACKAGE COMPRISING A PASSIVE DEVICE WITH A FRONT SIDE PROTECTION LAYER | US2025/026839 | H01L 21/48 | QUALCOMM INCORPORATED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240117 | THROUGH-SILICON VIA PITCH TRANSLATION FOR STACKED MEMORY DEVICES | US2025/026847 | H01L 23/538 | MICRON TECHNOLOGY, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240127 | SUBSTRATE SUPPORT HEAT TRANSFER STRUCTURES | US2025/027221 | H01L 21/687 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240151 | ETCHING SILICON-CONTAINING MATERIAL AND SILICON-AND-GERMANIUM-CONTAINING MATERIAL | US2025/027745 | H01L 21/3065 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240260 | HIGH BANDWIDTH MEMORY DEVICE BANDWIDTH SCALING AND ASSOCIATED SYSTEMS AND METHODS | US2025/028678 | H01L 25/065 | MICRON TECHNOLOGY, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240280 | ELECTRICAL DISCHARGE MACHINING PROCESSING FOR SEMICONDUCTOR WORKPIECE | US2025/028815 | H01L 21/02 | WOLFSPEED, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240282 | LASER-BASED PROCESSING FOR SEMICONDUCTOR WAFERS | US2025/028817 | H01L 21/02 | WOLFSPEED, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240309 | RF PULSING ASSISTED LOW-K MATERIAL DEPOSITION WITH HIGH DENSITY | US2025/028874 | H01L 21/02 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240380 | PLASMA-ENHANCED SILICON NITRIDE DEPOSITION | US2025/029014 | H01L 21/02 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240420 | DOPED TUNGSTEN CARBIDE LOW-K ETCH HARD MASK | US2025/029066 | H01L 21/311 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240441 | COMPUTER VISION FOR SUSCEPTOR LEVELING AND ALIGNMENT | US2025/029092 | H01L 21/68 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240458 | BOTTOM-UP GAP FILL USING NON-CONFORMAL POISONING | US2025/029117 | H01L 21/32 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240530 | SYSTEMS AND METHODS FOR VENTING A RETICLE POD | US2025/029216 | H01L 21/673 | ENTEGRIS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240535 | DUAL FORCE LIFT AND GROUND PINS FOR ELECTROSTATIC CHUCK AND METHOD FOR USE THEREOF | US2025/029224 | H01L 21/683 | AXCELIS TECHNOLOGIES, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240563 | CHAMBER WITH ENHANCEMENT LINER AND METHODS FOR DOWNSTREAM RESIDUE MANAGEMENT | US2025/029279 | H01L 21/67 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240564 | SELF-ALIGNED PATTERNING ON PACKAGE SUBSTRATE | US2025/029280 | H01L 23/00 | MICRON TECHNOLOGY, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240677 | DEPOSITION FILM TUNING AND TEMPERATURE TUNING FOR ETCH UNIFORMITY | US2025/029460 | H01L 21/311 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 47 | WO/2025/240914 | METHOD AND APPARATUS FOR THERMAL PROCESSING USING PULSED RESISTANCE HEATING | US2025/029846 | H01L 21/67 | PULSEFORGE, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای |